发明名称 METHOD, APPARATUS, AND SYSTEM FOR PASSIVE DIE STRAIN MEASUREMENT
摘要 At least one method, apparatus, and system for determining a distance between layers of a semiconductor device and, if desired, modifying a semiconductor device manufacturing process in view of the determined distance. The system comprises and the methods make use of a test circuit comprising a resistor, at least one of an inductor and a capacitor, a first terminal and a second terminal each configured to electrically connect to a first layer circuit and a second layer circuit of a semiconductor device.
申请公布号 US2017052014(A1) 申请公布日期 2017.02.23
申请号 US201514830214 申请日期 2015.08.19
申请人 GLOBALFOUNRIES Inc. 发明人 SMITH RYAN SCOTT
分类号 G01B7/14;G01L1/00;H01L21/67;G01N27/02;H01L21/66;H01L23/64 主分类号 G01B7/14
代理机构 代理人
主权项 1. A method, comprising: providing an input voltage (Vin) to a resistor of a test circuit, wherein the test circuit comprises the resistor in series with an impedance unit, and the test circuit comprises a first terminal in contact with a first layer circuit of a semiconductor device and a second terminal in contact with a second layer circuit of the semiconductor device; receiving an output voltage (Vout) from the test circuit; and determining at least one of a distance between the first layer and the second layer or a stress in at least one of the first layer and the second layer, based on Vout and Vin.
地址 Grand Cayman KY
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