发明名称 |
METHOD, APPARATUS, AND SYSTEM FOR PASSIVE DIE STRAIN MEASUREMENT |
摘要 |
At least one method, apparatus, and system for determining a distance between layers of a semiconductor device and, if desired, modifying a semiconductor device manufacturing process in view of the determined distance. The system comprises and the methods make use of a test circuit comprising a resistor, at least one of an inductor and a capacitor, a first terminal and a second terminal each configured to electrically connect to a first layer circuit and a second layer circuit of a semiconductor device. |
申请公布号 |
US2017052014(A1) |
申请公布日期 |
2017.02.23 |
申请号 |
US201514830214 |
申请日期 |
2015.08.19 |
申请人 |
GLOBALFOUNRIES Inc. |
发明人 |
SMITH RYAN SCOTT |
分类号 |
G01B7/14;G01L1/00;H01L21/67;G01N27/02;H01L21/66;H01L23/64 |
主分类号 |
G01B7/14 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method, comprising:
providing an input voltage (Vin) to a resistor of a test circuit, wherein the test circuit comprises the resistor in series with an impedance unit, and the test circuit comprises a first terminal in contact with a first layer circuit of a semiconductor device and a second terminal in contact with a second layer circuit of the semiconductor device; receiving an output voltage (Vout) from the test circuit; and determining at least one of a distance between the first layer and the second layer or a stress in at least one of the first layer and the second layer, based on Vout and Vin. |
地址 |
Grand Cayman KY |