SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; an n-side electrode including a first n-side electrode and a second n-side electrode; a first contact unit; a second contact unit; an n-side interconnect unit; a p-side electrode; and an insulating film. The insulating film includes a first insulating portion, a second insulating portion, a third insulating portion, and a fourth insulating portion.

主权项

1. A semiconductor light emitting device, comprising:
a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface, the light emitting layer being provided between the first semiconductor layer and the second semiconductor layer, the second surface opposing the first surface; an n-side electrode including a first n-side electrode and a second n-side electrode provided to be separated from each other on the first semiconductor layer, the first n-side electrode and the second n-side electrode extending in a first direction parallel to a major surface of the first semiconductor layer; a first contact unit electrically connected to the first n-side electrode; a second contact unit separated from the first contact unit and electrically connected to the second n-side electrode; an n-side interconnect unit connected to the first contact unit and the second contact unit; a p-side electrode provided on the second semiconductor layer, the p-side electrode being provided between the first n-side electrode and the second n-side electrode when viewed in plan; and an insulating film provided as one body on side surfaces of the semiconductor layer, the side surfaces being surfaces on an outer side of the semiconductor layer, the side surfaces including a first side surface extending in the first direction, a second side surface opposing the first side surface, a third side surface extending in a second direction, and a fourth side surface opposing the third side surface, the second direction intersecting the first direction, the insulating film including
a first insulating portion provided along a side surface of the first n-side electrode from the first side surface,a second insulating portion provided along a side surface of the second n-side electrode from the second side surface,a third insulating portion provided along a first end surface of the p-side electrode from the third side surface, the first end surface extending in the second direction, anda fourth insulating portion provided along a second end surface of the p-side electrode from the fourth side surface, the second end surface opposing the first end surface.