METHODS OF FORMING SEMICONDUCTOR DEVICES

摘要

Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming first and second dielectric layers in first and second trenches. The method includes forming first and second conductive layers on the first and second dielectric layers, respectively. The method includes forming first and second protective layers on the first and second conductive layers, respectively. The method includes performing an annealing process while the first and second protective layers are on the first and second conductive layers. The method includes removing the first and second protective layers. The method includes removing the first conductive layer, after performing the annealing process. Moreover, the method includes forming first and second gate metals in the first and second trenches, respectively, after removing the first conductive layer.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
forming an interlayer insulation film on a substrate, the interlayer insulation film comprising a first trench therein and a second trench therein that are spaced apart from each other; conformally forming a first dielectric film in the first trench and a second dielectric film in the second trench; forming a first conductive film on the first dielectric film and a second conductive film on the second dielectric film; forming a first shield film on the first conductive film and a second shield film on the second conductive film; performing annealing after the forming of the first and second shield films; removing the first and second shield films and the first conductive film after performing the annealing; forming a third conductive film on the first dielectric film and a fourth conductive film on the second conductive film; and forming a first gate metal on the third conductive film and a second gate metal on the fourth conductive film.