HIGH-K GATE DIELECTRIC AND METAL GATE CONDUCTOR STACK FOR FIN-TYPE FIELD EFFECT TRANSISTORS FORMED ON TYPE III-V SEMICONDUCTOR MATERIAL AND SILICON GERMANIUM SEMICONDUCTOR MATERIAL

摘要

An electrical device that includes at least one n-type field effect transistor including a channel region in a type III-V semiconductor device, and at least one p-type field effect transistor including a channel region in a germanium containing semiconductor material. Each of the n-type and p-type semiconductor devices may include gate structures composed of material layers including work function adjusting materials selections, such as metal and doped dielectric layers. The field effect transistors may be composed of fin type field effect transistors. The field effect transistors may be formed using gate first processing or gate last processing.

主权项

1. An electrical device comprising:
a first fin structure of a type III-V semiconductor material and a second fin structure of a germanium containing semiconductor material; an n-type FinFET including a channel region in the first fin structure, the n-type finFET including a n-type work function gate structure including a first interface layer of an aluminum containing dopant at an interface of the channel region and a first high-k dielectric layer, a first metal work function adjusting layer present on the first high-k dielectric layer and a first gate electrode atop the first metal work function adjusting layer; and a p-type FinFET including a channel region in the second fin structure, the p-type finFET including a p-type work function gate structure including a second interface layer including a dopant of a group IIA element, a group IIIB element or a combination thereof at an interface of the channel region and a second high-k dielectric layer, a second metal work function adjusting layer being present on the second high-k dielectric layer, and a second gate electrode atop the second metal work function adjusting layer, the second gate electrode having a same composition as the first gate electrode.