LIGHT-IRRADIATION TYPE THERMAL PROCESSING METHOD AND THERMAL PROCESSING APPARATUS

摘要

From a stage of preheating by a halogen lamp to irradiation with a flash by a flash lamp, a radiation thermometer is used for measuring the temperature of a back surface of a semiconductor wafer. A increased temperature ΔT is determined by which the back surface of the semiconductor wafer is increased in temperature from the preheating temperature by irradiation with a flash. The specific heat of the semiconductor wafer has a known value. Further, the increased temperature ΔT is proportionate to the magnitude of energy applied to a front surface of the semiconductor wafer by irradiation with a flash. Thus, a front surface attained temperature of the semiconductor wafer can be determined using the increased temperature ΔT of the back surface of the semiconductor wafer during irradiation with a flash.

主权项

1. A thermal processing method for heating a substrate by irradiating said substrate with a flash, comprising the steps of:
(a) preheating said substrate by increasing said substrate in temperature to a predetermined preheating temperature before irradiating said substrate with a flash; (b) heating said substrate increased in temperature to said preheating temperature by irradiating a front surface of said substrate with a flash; (c) measuring an increased temperature by which a back surface of said substrate is increased in temperature from said preheating temperature by irradiation with a flash; and (d) determining a front surface attained temperature of said substrate during irradiation with a flash based on said increased temperature.