| 发明名称 |
METHOD FOR THE PRODUCTION OF A NITRIDE COMPOUND SEMICONDUCTOR LAYER |
| 摘要 |
Described is a method for producing a nitride compound semiconductor layer, involving the steps of:—depositing a first seed layer (1) comprising a nitride compound semiconductor material on a substrate (10);—desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate (10);—depositing a second seed layer (2) comprising a nitride compound semiconductor material; and—growing the nitride compound semiconductor layer (3) containing a nitride compound semiconductor material onto the second seed layer (2). |
| 申请公布号 |
US2017053795(A1) |
申请公布日期 |
2017.02.23 |
| 申请号 |
US201515119703 |
申请日期 |
2015.02.12 |
| 申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
OFF Juergen;PETER Matthias;LEHNHARDT Thomas;BERGBAUER Werner |
| 分类号 |
H01L21/02;C30B29/40;C30B25/18 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. Method for the production of a nitride compound semiconductor layer, comprising the steps:
deposition of a first seed layer (1) comprising a nitride compound semiconductor material onto a substrate, at least partial desorption of the nitride compound semiconductor material of the first seed layer from the substrate, deposition of a second seed layer (2) comprising a nitride compound semiconductor material, and growth of the nitride compound semiconductor layer (3) comprising a nitride compound semiconductor material onto the second seed layer (2). |
| 地址 |
Regensburg DE |
