| 发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR |
| 摘要 |
A semiconductor device includes a semiconductor substrate, a stress generation source that is provided on the semiconductor substrate and generates stress in the semiconductor substrate, and a first field-effect transistor and a second field-effect transistor provided on the semiconductor substrate. The first field-effect transistor and the semiconductor substrate are disposed such that channel directions from a source toward a drain are different from each other in response to positions with respect to the stress generation source. |
| 申请公布号 |
US2017053914(A1) |
申请公布日期 |
2017.02.23 |
| 申请号 |
US201615193842 |
申请日期 |
2016.06.27 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
TASHIRO Hiroko;ISHITSUKA Takeshi |
| 分类号 |
H01L27/092;H01L21/8238;H01L21/768;H01L29/78;H01L23/535 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate; a stress generation source that is provided on the semiconductor substrate and generates stress in the semiconductor substrate; and a first field-effect transistor and a second field-effect transistor provided on the semiconductor substrate; wherein the first field-effect transistor and the semiconductor substrate are disposed such that channel directions from a source toward a drain are different from each other in response to positions with respect to the stress generation source. |
| 地址 |
Kawasaki-shi JP |
