发明名称 ELECTRICALLY CONDUCTIVE BARRIERS FOR INTEGRATED CIRCUITS
摘要 Electrically conductive barriers for integrated circuits and integrated circuits and methods including the electrically conductive barriers. The integrated circuits include a semiconductor substrate, a semiconductor device supported by a device portion of the substrate, and a plurality of bond pads supported by a bond pad portion of the substrate. The integrated circuits also include an electrically conductive barrier that projects away from an intermediate portion of the substrate and is configured to decrease capacitive coupling between the device portion and the bond pad portion. The methods can include methods of manufacturing an integrated circuit. These methods include forming a semiconductor device, forming a plurality of bond pads, forming a plurality of electrically conductive regions, and forming an electrically conductive barrier. The methods also can include methods of operating an integrated circuit. These methods include applying an input electric signal, receiving an output electric signal, and applying a reference potential.
申请公布号 US2017052082(A1) 申请公布日期 2017.02.23
申请号 US201514832924 申请日期 2015.08.21
申请人 Freescale Semiconductor, Inc. 发明人 Dawson Chad S.;McNeil Andrew C.;Tang Jinbang
分类号 G01L9/00;H01L21/56;H01L23/00;H01L23/31 主分类号 G01L9/00
代理机构 代理人
主权项 1. An integrated circuit, comprising: a semiconductor substrate; a semiconductor device supported by a device portion of the substrate; a plurality of bond pads supported by a bond pad portion of the substrate, wherein the plurality of bond pads is in electrical communication with the semiconductor device, and further wherein the bond pad portion is spaced apart from the device portion such that an intermediate portion of the substrate separates the device portion from the bond pad portion; and an electrically conductive barrier that is supported by the intermediate portion of the substrate, projects away from the intermediate portion of the substrate, and is configured to decrease capacitive coupling between the device portion and the bond pad portion.
地址 Austin TX US