| 发明名称 |
CHALCO-PHOSPHATE-BASED HARD RADIATION DETECTORS |
| 摘要 |
Methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds having the formula A2P2X6, where A represents Pb or Sn and X represents S or Se, as photoelectric materials. |
| 申请公布号 |
WO2017030624(A1) |
申请公布日期 |
2017.02.23 |
| 申请号 |
WO2016US35183 |
申请日期 |
2016.06.01 |
| 申请人 |
NORTHWESTERN UNIVERSITY |
发明人 |
KANATZIDIS, Mercouri G.;WANG, Peng L.;WESSELS, Bruce W.;LIU, Zhifu |
| 分类号 |
G01T1/24;H01L31/032;H01L31/115 |
主分类号 |
G01T1/24 |
| 代理机构 |
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