METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device includes forming first cell patterns on a substrate, forming a first layer relative to the first cell patterns, and forming a second cell pattern and a peripheral pattern on the first layer. The second cell pattern includes first holes in a cell region and the peripheral pattern is located in a peripheral region. The method also includes filling the first holes, removing the second cell pattern to expose pillars, and forming second holes. Each of the second holes corresponds to adjacent cell spacers of the pillars. The method also includes removing the pillars to form third holes corresponding to respective ones of the cell spacers, and etching the substrate using the cell spacers, the first cell patterns, and the peripheral pattern as etch masks to form a trench.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
preparing a substrate including a cell region and a peripheral region; forming first cell patterns in an extending direction and substantially parallel to each other on the substrate of the cell region; forming a first material layer filling a space between the first cell patterns on the substrate of the cell and peripheral regions; forming a second cell pattern including first holes on the first material layer of the cell region and a peripheral pattern on the first material layer of the peripheral region; forming a plurality of pillars respectively filling the first holes of the second cell pattern; forming a blocking layer on the peripheral pattern and selectively covering the peripheral region; removing the second cell pattern to expose the pillars; forming cell spacers on outer sidewalls of the pillars to define second holes, each of the second holes corresponding to four cell spacers adjacent to each other; removing the pillars to form third holes corresponding to the cell spacers, respectively; and etching the substrate using the cell spacers, the first cell patterns, and the peripheral pattern as etch masks to form a trench.