FINFET WITH SOURCE/DRAIN STRUCTURE AND METHOD OF FABRICATION THEREOF

摘要

A method of semiconductor fabrication that includes providing a plurality of fins extending from a substrate is described. Each of the plurality of fins has a top surface and two opposing lateral sidewalls. A gate structure is formed over a first region of each of the plurality of fins and interfaces the top surface and the two opposing lateral sidewalls. A source/drain epitaxial feature is formed on a second region of each of the plurality of fins. The source/drain epitaxial feature interfaces the top surface and the two opposing lateral sidewalls. An air gap is provided which is defined by at least one surface of the source/drain epitaxial feature.

主权项

1. A method of semiconductor device fabrication, comprising:
providing a plurality of fins extending from a substrate, wherein each of the plurality of fins has a top surface and two opposing lateral sidewalls; forming a gate structure over a first region of each of the plurality of fins wherein the gate structure interfaces the top surface and the two opposing lateral sidewalls; after forming the gate structure, trimming each of the plurality fins in a second region, wherein the trimming decreases a width of each of the plurality of fins in the second region; forming a source/drain epitaxial feature on the second region of each of the plurality of fins, wherein the source/drain epitaxial feature interfaces sidewalls of the plurality of trimmed fins; and providing an air gap over the substrate and defined by at least one surface of the source/drain epitaxial feature.