发明名称 CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND
摘要 A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).;
申请公布号 US2017052449(A1) 申请公布日期 2017.02.23
申请号 US201615241345 申请日期 2016.08.19
申请人 OSAKA UNIVERSITY ;TOKYO ELECTRON LIMITED 发明人 NAKAGAWA HISASHI;NARUOKA TAKEHIKO;NAGAI TOMOKI;TAGAWA SEIICHI;OSHIMA AKIHIRO;NAGAHARA SEIJI
分类号 G03F7/20;G03F7/32;C07D335/16;C07D317/72;C07D493/10;G03F7/38;G03F7/039 主分类号 G03F7/20
代理机构 代理人
主权项 1. A pattern-forming method comprising: patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm; floodwise exposing the resist material film patternwise exposed, to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm; baking the resist material film floodwise exposed; and developing the resist material film baked with a developer solution to form a resist pattern, the chemically amplified resist material comprising: a base component that is capable of being made soluble or insoluble in the developer solution by an action of an acid; and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure, wherein the generative component comprises: a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive sensitizer generating agent; the radiation-sensitive sensitizer generating agent and a radiation-sensitive acid generating agent; or the radiation-sensitive acid-and-sensitizer generating agent, the radiation-sensitive sensitizer generating agent and the radiation-sensitive acid generating agent, wherein the radiation-sensitive acid-and-sensitizer generating agent generates, upon an exposure to the first radioactive ray, an acid, and a radiation-sensitive sensitizer absorbing the second radioactive ray, and substantially does not generate the acid and the radiation-sensitive sensitizer upon an exposure to the second radioactive ray in light-unexposed regions that are not exposed to the first radioactive ray in the patternwise exposing; the radiation-sensitive sensitizer generating agent generates, upon the exposure to the first radioactive ray, a radiation-sensitive sensitizer absorbing the second radioactive ray, and substantially does not generate the radiation-sensitive sensitizer upon the exposure to the second radioactive ray in light-unexposed regions that are not exposed to the first radioactive ray in the patternwise exposing; and the radiation-sensitive acid generating agent generates an acid upon the exposure to the first radioactive ray, and substantially does not generate the acid upon the exposure to the second radioactive ray in light-unexposed regions that are not exposed to the first radioactive ray in the patternwise exposing, the radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A): wherein, in the formula (A), Ra1 and Ra2 each independently represent a monovalent organic group having 1 to 20 carbon atoms, or Ra1 and Ra2 taken together represent a ring structure having 4 to 20 ring atoms together with O—C—O to which Ra1 and Ra2 bond; Ra3 and Ra4 each independently represent a monovalent organic group having 1 to 20 carbon atoms, —OH, —SH, —NH2, —PH2, a halogen atom or a nitro group; m and n are each independently an integer of 0 to 4, wherein a sum of m and n is no less than 1, wherein in a case where m is no less than 2, a plurality of Ra3s are identical or different, and at least two of the plurality of Ra3s optionally taken together represent a ring structure having 4 to 20 ring atoms together with the carbon chain to which the at least two of the plurality of Ra3s bond, and wherein in a case where n is no less than 2, a plurality of Ra4s are identical or different, and at least two of the plurality of Ra4s optionally taken together represent a ring structure having 4 to 20 ring atoms together with the carbon chain to which the at least two of the plurality of Ra4s bond; and X represents a single bond, an oxygen atom, a sulfur atom, —CRa5Ra6— or —NRa7—, wherein Ra5, Ra6 and Ra7 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, wherein in a case where m is no less than 1, one or a plurality of Ra3(s) and at least one of Ra5 and Ra6 optionally taken together represent a ring structure having 4 to 20 ring atoms together with the carbon chain to which the one or a plurality of Ra3(s) and the at least one of Ra5 and Ra6 bond, wherein in a case where n is no less than 1, one or a plurality of Ra4 and at least one of Ra5 and Ra6 optionally taken together represent a ring structure having 4 to 20 ring atoms together with the carbon chain to which the one or a plurality of Ra4 and the at least one of Ra5 and Ra6 bond, wherein in a case where m is no less than 1, one or a plurality of Ra3(s) and Ra7 optionally taken together represent an aliphatic heterocyclic structure having 4 to 20 ring atoms together with the atom chain to which the one or a plurality of Ra3(s) and Ra7 bond, and wherein in a case where n is no less than 1, one or a plurality of Ra4(s) and Ra7 optionally taken together represent an aliphatic heterocyclic structure having 4 to 20 ring atoms together with the atom chain to which the one or a plurality of Ra4(s) and Ra7 bond.
地址 SUITA-SHI JP