DEVICES INCLUDING HIGH PERCENTAGE SiGe FINS FORMED AT A TIGHT PITCH AND METHODS OF MANUFACTURING SAME

摘要

A method for manufacturing a semiconductor device comprises forming a plurality of silicon fins on a substrate, wherein the plurality of silicon fins are spaced apart from each other at a pitch and formed to a height in a direction perpendicular to a top surface of the substrate, forming a nitride layer between each of adjacent silicon fins and on lateral surfaces of each of the silicon fins, removing a portion of each of the silicon fins to reduce the height of the silicon fins, epitaxially growing a silicon germanium (SiGe) layer on the remaining portion of each of the silicon fins, performing a top-down condensation process on the epitaxially grown SiGe layers to form an oxide layer and an SiGe fin under the oxide layer in place of each epitaxially grown SiGe layer and the remaining portion of each silicon fin, and removing the oxide layers and nitride layers.

主权项

1. A method for manufacturing a semiconductor device, comprising:
forming a plurality of sacrificial fins on a substrate, wherein the plurality of sacrificial fins are spaced apart from each other at a pitch and formed to a height in a direction perpendicular to a top surface of the substrate and to a width in a direction parallel to the top surface of the substrate; forming an insulating layer between each of adjacent sacrificial fins and on lateral surfaces of each of the sacrificial fins; removing a portion of each of the sacrificial fins to reduce the height of the sacrificial fins; epitaxially growing a silicon germanium (SiGe) layer on the remaining portion of each of the sacrificial fins; performing a top-down condensation process on the epitaxially grown SiGe layers to form an oxide layer and an SiGe fin under the oxide layer in place of each epitaxially grown SiGe layer and the remaining portion of each sacrificial fin; wherein a width of the oxide layers and a width of the SiGe fins under the oxide layers are at least substantially the same as the width of the sacrificial fins, and the oxide layers are respectively located on top surfaces of the SiGe fins without extending onto lateral surfaces of the SiGe fins; and removing the oxide layers and insulating layers after performing the top-down condensation process.