| 发明名称 |
SELECTIVE EPITAXY USING EPITAXY-PREVENTION LAYERS |
| 摘要 |
A method for forming an epitaxial structure includes providing a two-dimensional material on a crystal semiconductor material and opening up portions of the two-dimensional material to expose the crystal semiconductor material. A structure is epitaxially grown in the portions opened up in the crystal semiconductor material such that the epitaxial growth is selective to the exposed crystal semiconductor material relative to the two-dimensional material. |
| 申请公布号 |
US2017053796(A1) |
申请公布日期 |
2017.02.23 |
| 申请号 |
US201615343078 |
申请日期 |
2016.11.03 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Cheng-Wei;Kim Jeehwan;Ott John A.;Sadana Devendra K. |
| 分类号 |
H01L21/027;H01L21/02 |
主分类号 |
H01L21/027 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming an epitaxial structure, comprising:
opening up portions of a two-dimensional material on a semiconductor material to expose the semiconductor material; and epitaxially growing a structure in the portions opened up in the semiconductor material such that the epitaxial growth is selective to the exposed semiconductor material relative to the two-dimensional material. |
| 地址 |
Armonk NY US |
