| 摘要 |
The embodiment relates to a light emitting device and a method for manufacturing the same. The light emitting device includes a substrate (105), a plurality of convex portions (107) protruding from a flat top surface (106) of the substrate, a first semiconductor layer on the substrate, an active layer (140) on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. A circumferential surface of each convex portion includes a continuous spherical surface (107A), and a height of the convex portion is about 1.5µm or less, wherein the first semiconductor layer has a discontinuous lower surface. |
