| 摘要 |
PROBLEM TO BE SOLVED: To arbitrarily control pressure distribution of a process gas in a processing chamber, in plasma processing.SOLUTION: In a plasma processing apparatus, an upper electrode 21 and a lower electrode 28 are arranged so as to be opposed to each other in a processing chamber 20. The plasma processing apparatus applies a high-frequency power to at least any one of the upper electrode 21 and the lower electrode 28 to turn the process gas introduced to the processing chamber 20 into plasma, and performs processing to a processed body W mounted on the lower electrode 28. To an upper central part and a lateral part of the processing chamber 20, air exhaustion parts 22 and 26 are respectively provided. To an upper part of the processing chamber 20, an outside gas introduction part 31 arranged on an outer peripheral side from the lower electrode 28, and an inside gas introduction part 32 surrounding an outer periphery of the air exhaustion part 22 provided at the upper central part, and arranged inside the outside gas introduction part 31, are provided in a concentric fashion with the air exhaustion part 22 provided at the upper central part. |
