发明名称 IMPURITY-DIFFUSING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
摘要 An impurity-diffusing composition comprising (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. (In the formula, R 1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R 1 may be the same or different. R 2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R 2 may be the same or different. R 3 and R 4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R 3 and a plurality of R 4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.) Provided is an impurity-diffusing composition that is excellent in printability on a semiconductor substrate and impurity diffusibility thereinto, less prone to cracks during the process of firing and diffusion, and becomes, when fired, a fired film having sufficient masking properties for other impurity diffusion agents.
申请公布号 EP3018699(A4) 申请公布日期 2017.02.22
申请号 EP20140819841 申请日期 2014.06.30
申请人 Toray Industries, Inc. 发明人 INABA, Sachio;MURASE, Seiichiro;SHIMIZU, Hiroji;DAN, Kouichi;SUWA, Mitsuhito
分类号 H01L21/225;C09D183/04;H01L31/068 主分类号 H01L21/225
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