| 摘要 |
PROBLEM TO BE SOLVED: To form an embedded insulation layer with good producibility in a semiconductor layer which uses SiC, in a simple step.SOLUTION: A surface temperature of monocrystal SiC 12 is locally raised abruptly, and then it is abruptly cooled down. As a result, an amorphous layer 30 is locally formed of the monocrystal. The amorphous layer 30 is a high resistance layer (insulation layer) regardless of conductive type or resistibility of original monocrystal SiC. Because of this reason, such amorphous layer can be used like an embedded insulation layer. For that purpose, any one of two means can be used: (1) a layer 100 which efficiently absorbs laser light is locally formed on a semiconductor layer, and then laser light is radiated; and (2) the laser light is locally radiated to the semiconductor layer. |
