| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which utilizes a structure of a field effect transistor and in which leakage current at an off time is suppressed.SOLUTION: A nitride semiconductor device comprises: a semiconductor layer laminate including a first nitride semiconductor layer, and a second nitride semiconductor layer which is formed on the first nitride semiconductor layer and has bandgap larger then that of the first nitride semiconductor layer, in which a channel is formed near a boundary surface of the first nitride semiconductor layer on the second nitride semiconductor layer side; first electrode and second electrode which are ohmic electrodes formed on the semiconductor layer laminate in a channel formation region where the channel is formed and at a distance from each other; and a third electrode formed between the first electrode and the second electrode and at a distance from the first electrode and the second electrode, for controlling the channel, in which the second electrode is a cathode electrode and an electrode formed by short-circuiting the first electrode and the third electrode outside the channel formation region is an anode electrode. |
