发明名称 |
SRAM cell with dynamic split ground and split wordline |
摘要 |
An SRAM cell with dynamic split ground (GND) and split wordline (WL) for extreme scaling is disclosed. The memory cell includes a first access transistor enabled by a first wordline to control access to cross coupled inverters by a first bitline. The memory cell further includes a second access transistor enabled by a second wordline to control access to the cross coupled inverters by a second bitline. The memory cell further includes a split ground line comprising a first ground line (GNDL) separated from a second ground line (GNDR). The GNDL is connected to a transistor of a first inverter of the cross coupled inverters and the GNDR is connected to a first transistor of a second inverter of the cross coupled inverters. |
申请公布号 |
US9576646(B2) |
申请公布日期 |
2017.02.21 |
申请号 |
US201514963586 |
申请日期 |
2015.12.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Wong Robert C. |
分类号 |
G11C5/02;G11C11/419;G11C11/418;G11C8/14 |
主分类号 |
G11C5/02 |
代理机构 |
Roberts Mlotkowski Safran Cole & Calderon, P.C. |
代理人 |
Meyers Steven;Calderon Andrew M.;Roberts Mlotkowski Safran Cole & Calderon, P.C. |
主权项 |
1. A memory cell, comprising:
a first access transistor enabled by a first wordline to control access to cross coupled inverters by a first bitline; a second access transistor enabled by a second wordline to control access to the cross coupled inverters by a second bitline; and a split ground line comprising a first ground line (GNDL) separated from a second ground line (GNDR), the GNDL being connected to a transistor of a first inverter of the cross coupled inverters and the GNDR being connected to a first transistor of a second inverter of the cross coupled inverters, wherein during read access for the second bitline, the GNDL is raised by about 10% of Vdd above GND and/or GNDR is lowered by about 10% of Vdd below GND. |
地址 |
Armonk NY US |