| 发明名称 | Insulated-gate bipolar transistor collector-emitter saturation voltage measurement | ||
| 摘要 | In one example, a method includes determining that an insulated-gate bipolar transistor (IGBT) is saturated, and while the IGBT is saturated, determining a collector-emitter saturation voltage (VCESat) of the IGBT. | ||
| 申请公布号 | US9575113(B2) | 申请公布日期 | 2017.02.21 |
| 申请号 | US201414175503 | 申请日期 | 2014.02.07 |
| 申请人 | Infineon Technologies AG | 发明人 | Mankel Michael;Castro-Serrato Carlos |
| 分类号 | G01R31/02;G01R31/26;G01K7/01 | 主分类号 | G01R31/02 |
| 代理机构 | Shumaker & Sieffert, P.A. | 代理人 | Shumaker & Sieffert, P.A. |
| 主权项 | 1. A method comprising: determining that an insulated-gate bipolar transistor (IGBT) is saturated; while the IGBT is saturated, determining a collector-emitter saturation voltage (VCESat) of the IGBT; determining the collector current (IC) of the IGBT; and determining, based on the VCESat of the IGBT and the IC of the IGBT, a temperature of the IGBT. | ||
| 地址 | Neubiberg DE | ||