发明名称 |
Method for forming metal oxide film, metal oxide film and apparatus for forming metal oxide film |
摘要 |
The present method of forming a metal oxide film can increase production efficiency while maintaining the low resistance of the metal oxide film. The present method of forming a metal oxide film includes first misting a solution containing a metallic element and ethylenediamine; meanwhile, heating a substrate; and then, supplying the misted solution onto a first main surface of the substrate. |
申请公布号 |
US9574271(B2) |
申请公布日期 |
2017.02.21 |
申请号 |
US200913383766 |
申请日期 |
2009.09.02 |
申请人 |
TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION;KYOTO UNIVERSITY |
发明人 |
Orita Hiroyuki;Shirahata Takahiro;Yoshida Akio;Fujita Shizuo;Kameyama Naoki;Kawaharamura Toshiyuki |
分类号 |
C23C16/00;C23C18/12;H01L31/18;H01G9/20;H01L29/786 |
主分类号 |
C23C16/00 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A method of forming a metal oxide film with a desired mobility, the method comprising:
supplying a misted solution comprising a metallic element and an amount of ethylenediamine sufficient to provide the desired mobility onto a first main surface of a substrate while heating the substrate, wherein
the amount of ethylenediamine is determined from a relationship showing change in mobility of the metal oxide film with a changing ethylenediamine amount but no significant change in carrier concentration of the metal oxide film with the changing ethylenediamine amount. |
地址 |
Tokyo JP |