发明名称 Method for forming metal oxide film, metal oxide film and apparatus for forming metal oxide film
摘要 The present method of forming a metal oxide film can increase production efficiency while maintaining the low resistance of the metal oxide film. The present method of forming a metal oxide film includes first misting a solution containing a metallic element and ethylenediamine; meanwhile, heating a substrate; and then, supplying the misted solution onto a first main surface of the substrate.
申请公布号 US9574271(B2) 申请公布日期 2017.02.21
申请号 US200913383766 申请日期 2009.09.02
申请人 TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION;KYOTO UNIVERSITY 发明人 Orita Hiroyuki;Shirahata Takahiro;Yoshida Akio;Fujita Shizuo;Kameyama Naoki;Kawaharamura Toshiyuki
分类号 C23C16/00;C23C18/12;H01L31/18;H01G9/20;H01L29/786 主分类号 C23C16/00
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method of forming a metal oxide film with a desired mobility, the method comprising: supplying a misted solution comprising a metallic element and an amount of ethylenediamine sufficient to provide the desired mobility onto a first main surface of a substrate while heating the substrate, wherein the amount of ethylenediamine is determined from a relationship showing change in mobility of the metal oxide film with a changing ethylenediamine amount but no significant change in carrier concentration of the metal oxide film with the changing ethylenediamine amount.
地址 Tokyo JP