| 发明名称 | Polishing method | ||
| 摘要 | A polishing method includes: rotating a polishing table that supports a polishing pad; polishing a conductive film by pressing a substrate having the conductive film against the polishing pad; obtaining a film thickness signal with use of an eddy current film-thickness sensor disposed in the polishing table; determining a thickness of the polishing pad based on the film thickness signal; determining a polishing rate of the conductive film corresponding to the determined thickness of the polishing pad; calculating an expected amount of polishing of the conductive film to be polished at the determined polishing rate for a predetermined polishing time; calculating a temporary end-point film thickness by adding the expected amount of polishing to a target thickness; and terminating polishing of the conductive film when the predetermined polishing time has elapsed from a point of time when the thickness of the conductive film has reached the temporary end-point film thickness. | ||
| 申请公布号 | US9573245(B2) | 申请公布日期 | 2017.02.21 |
| 申请号 | US201414506562 | 申请日期 | 2014.10.03 |
| 申请人 | Ebara Corporation | 发明人 | Takahashi Taro;Kawabata Yasumitsu |
| 分类号 | B24B49/00;B24B49/18;B24B37/013 | 主分类号 | B24B49/00 |
| 代理机构 | Baker & Hostetler LLP | 代理人 | Baker & Hostetler LLP |
| 主权项 | 1. A polishing method, comprising: rotating a polishing table that supports a polishing pad; polishing a conductive film by pressing a substrate, having the conductive film formed on a surface thereof, against the polishing pad; obtaining a film thickness signal, which varies in accordance with a thickness of the conductive film, with use of an eddy current film-thickness sensor disposed in the polishing table; determining a thickness of the polishing pad based on the film thickness signal; determining a polishing rate of the conductive film corresponding to the determined thickness of the polishing pad; calculating an expected amount of polishing of the conductive film to be polished at the determined polishing rate for a predetermined polishing time; calculating a temporary end-point film thickness by adding the expected amount of polishing to a target thickness of the conductive film; and terminating the polishing of the conductive film when the predetermined polishing time has elapsed from a point of time when the thickness of the conductive film has reached the temporary end-point film thickness. | ||
| 地址 | Tokyo JP | ||