| 摘要 |
PURPOSE:To eliminate the deviation of phases or unbalance, by sequentially branching a metallized layer from an electrode taking out part, bringing the branches close to the individual semiconductor elements, and connecting the approached terminals to the semiconductor elements by connecting means. CONSTITUTION:FET chips 1, 2, 3, and 4 are brazed on a stud 12 of a grounding metal 11 and connected to an input side dielectric substrate 5 and an output side matching circuit 7 by wires 9 and 10. With respect to electric length, the electric lengths from A to C and C' and the electric lengths from A to F, F', G, and G' are made the same in the input side circuit of a metallized pattern. Resistors 13 are inserted between the FET chips. The electric lengths from B to D and D' and the electric length from B to H, H', I, and I' are made the same in the output side circuit. In this constitution, the unbalance in the FET chips on the input and output sides can be absorbed therein. |
