发明名称 Pattern decomposition for directed self assembly patterns templated by sidewall image transfer
摘要 After forming spacers over a hard mask layer using a sidewall image transfer process, a neutral material layer is formed on the portions of the hard mask layer that are not covered by the spacers. The spacers and the neutral material layer guide the self-assembly of a block copolymer material. The microphase separation of the block copolymer material provides a lamella structure of alternating domains of the block copolymer material.
申请公布号 US9576817(B1) 申请公布日期 2017.02.21
申请号 US201514957835 申请日期 2015.12.03
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 Cheng Joy;Guillorn Michael A.;Liu Chi-Chun;Tsai Hsinyu
分类号 H01L21/311;H01L21/027 主分类号 H01L21/311
代理机构 Scully, Scott, Murphy & Presser, P.C. 代理人 Scully, Scott, Murphy & Presser, P.C. ;Percello, Esq. Louis J.
主权项 1. A method of directed self-assembly of a block copolymer material comprising: forming spacers on sidewalls of a plurality of mandrels located on a hard mask layer; removing the plurality of mandrels, leaving the spacers protruding from a top surface of the hard mask layer; forming a neutral material layer on exposed portions of the hard mask layer that are not covered by the spacers, wherein the neutral material layer only surrounds a bottom portion of each of the spacers and directly contacts opposite sidewalls of each of the spacers; depositing the block copolymer material onto the neutral material layer and between the spacers; annealing the block copolymer material to form alternating first domains including a first polymer block of the block copolymer material and second domains including a second polymer block of the block copolymer material; and selectively removing the first domains or the second domains, wherein the neutral material layer remains contacting the opposite sidewalls of each of the spacers after the selectively removing the first domains or the second domains.
地址 Armonk NY US