发明名称 Array substrate, method for fabricating and testing array substrate, and display device
摘要 The present invention provides an array substrate, which includes a plurality of pixel units, each pixel unit includes a thin film transistor, a pixel electrode, a common electrode and a passivation layer, the thin film transistor includes an active layer, a gate electrode, a source electrode and a drain electrode, the drain electrode and the pixel electrode are connected, the passivation layer is disposed on the active layer, the source electrode, the drain electrode and the pixel electrode, the common electrode is disposed above the pixel electrode with the passivation layer therebetween, a test electrode is disposed on the active layer and under the passivation layer, the test electrode is electrically insulated from the gate electrode, the source electrode and the drain electrode. Correspondingly, a method for fabricating and a method for testing the array substrate, and a display device including the array substrate are provided.
申请公布号 US9576866(B2) 申请公布日期 2017.02.21
申请号 US201514965300 申请日期 2015.12.10
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 Zhang Mi
分类号 H01L23/58;H01L21/66;H01L27/12;H01L51/05;H01L29/786;H01L29/66 主分类号 H01L23/58
代理机构 Frommer Lawrence & Haug LLP 代理人 Frommer Lawrence & Haug LLP
主权项 1. A method for fabricating an array substrate, the method comprising the following steps: 1) forming a thin film transistor, a pixel electrode, and a test electrode on a substrate, the thin film transistor including an active layer, a gate electrode, a source electrode and a drain electrode, the pixel electrode being connected to the drain electrode of the thin film transistor, the test electrode being formed on the active layer, and the test electrode being electrically insulated from the gate electrode, the source electrode and the drain electrode; 2) forming a passivation layer on the substrate subjected to step 1), the passivation layer covering the test electrode, the active layer, the source electrode, the drain electrode and the pixel electrode; and 3) forming a common electrode on the substrate subjected to step 2), the common electrode being disposed above the pixel electrode with the passivation layer therebetween; wherein the test electrode is configured for testing characteristics of the thin film transistor when both the pixel electrode and the drain electrode are covered by the passivation layer, and wherein the common electrode is configured to be electrically connected to the test electrode so that a signal from the drain electrode is transmitted to the common electrode so as to test characteristics of the thin film transistor.
地址 Beijing CN