Semiconductor device contacts

摘要

Techniques are disclosed for forming contacts in silicon semiconductor devices. In some embodiments, a transition layer forms a non-reactive interface with the silicon semiconductor contact surface. In some such cases, a conductive material provides the contacts and the material forming a non-reactive interface with the silicon surface. In other cases, a thin semiconducting or insulating layer provides the non-reactive interface with the silicon surface and is coupled to conductive material of the contacts. The techniques can be embodied, for instance, in planar or non-planar (e.g., double-gate and tri-gate FinFETs) transistor devices.

主权项

1. A semiconductor device comprising:
a substrate having a channel region therein; a gate dielectric on the channel region; a gate electrode on the gate dielectric; doped silicon source and drain regions at least one of in and on the substrate and adjacent the channel region such that the channel region is between the silicon source and drain regions; a transition layer in contact with the silicon source and drain regions, wherein the transition layer is an insulator or semiconducting material and includes no silicide region on the silicon source and drain regions; and a conducting material in contact with and distinct from the transition layer; wherein the transition layer has a thickness of 5 nanometers or less, such that the distance between the conducting material and the silicon source and drain regions is 5 nanometers or less.