发明名称 Rotation plus vibration magnet for magnetron sputtering apparatus
摘要 In some embodiments, the present disclosure relates to a plasma processing system having a magnetron that provides a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron has a magnetic element that generates a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft that rotates the magnetic element about a center of the sputtering target. The elastic element may vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.
申请公布号 US9574265(B2) 申请公布日期 2017.02.21
申请号 US201514791795 申请日期 2015.07.06
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Lin Bo-Hung;Tsai Ming-Chih;Chou You-Hua;Kao Chung-En
分类号 C23C14/35;H01J37/32;H01J37/34 主分类号 C23C14/35
代理机构 Eschweiler & Associates, LLC 代理人 Eschweiler & Associates, LLC
主权项 1. A method of performing a physical vapor deposition process, comprising: providing power to a magnetron comprising a magnetic element, arranged on a backside of a sputtering target, to generate a magnetic field that extends through the sputtering target; moving the magnetic element in an angular direction around an axis-of-rotation; and generating a secondary magnetic field that pushes the magnetic element toward the axis-of-rotation with a repulsive force that concurrently moves the magnetic element in a radial direction.
地址 Hsin-Chu TW