Method of treating a porous dielectric layer and a method of fabricating a semiconductor device using the same

摘要

A method of treating a porous dielectric layer includes preparing a substrate on which the porous dielectric layer including an opening and pores exposed by the opening is formed, supplying a first precursor onto the substrate to form a first sub-sealing layer sealing the exposed pores, and supplying a second precursor onto the first sub-sealing layer to form a second sub-sealing layer covering the first sub-sealing layer. Each of the first and second precursors includes silicon, and a molecular weight of the second precursor is smaller than that of the first precursor.

主权项

1. A method of treating a porous dielectric layer, the method comprising:
providing a substrate including the porous dielectric layer having an opening, the porous dielectric layer including a plurality of pores exposed by the opening; supplying a first precursor onto the substrate to form a first sub-sealing layer sealing the exposed plurality of pores; and supplying a second precursor onto the first sub-sealing layer to form a second sub-sealing layer covering the first sub-sealing layer, wherein the first precursor includes a cyclosilazane-based material or a cyclosiloxane-based material and the second precursor includes a silane-based material, and wherein the second precursor has a molecular weight that is smaller than the molecular weight of the first precursor.