Non-volatile resistive oxide memory cells and methods of forming non-volatile resistive oxide memory cells

摘要

A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. The first conductive electrode has an elevationally outermost surface and opposing laterally outermost edges at the elevationally outermost surface in one planar cross section. Multi-resistive state metal oxide-comprising material is formed over the first conductive electrode. Conductive material is deposited over the multi-resistive state metal oxide-comprising material. A second conductive electrode of the memory cell which comprises the conductive material is received over the multi-resistive state metal oxide-comprising material. The forming thereof includes etching through the conductive material to form opposing laterally outermost conductive edges of said conductive material in the one planar cross section at the conclusion of said etching which are received laterally outward of the opposing laterally outermost edges of the first conductive electrode in the one planar cross section.

主权项

1. A method of forming a non-volatile resistive oxide memory cell, comprising:
forming a first conductive electrode of the memory cell as part of a substrate, the first conductive electrode being within insulative material which comprises an elevationally outer surface, an opening being in the insulative material through the elevationally outer surface in one planar cross section over the first conductive electrode, the opening extending upwardly to the elevationally outermost surface of the insulative material in the one planar cross section; forming programmable multi-resistive state metal oxide-comprising material within the opening over the first conductive electrode, the opening having a total volume that is completely filled by and with the programmable multi-resistive state metal oxide-comprising material; and forming a second conductive electrode of the memory cell over the programmable multi-resistive state metal oxide-comprising material.