| 发明名称 |
NONVOLATILE MAGNETIC MEMORY DEVICE |
| 摘要 |
A nonvolatile magnetic memory device having a magnetoresistance-effect element includes: (A) a laminated structure having a recording layer in which an axis of easy magnetization is oriented in a perpendicular direction; (B) a first wiring line electrically connected to a lower part of the laminated structure; and (C) a second wiring line electrically connected to an upper part of the laminated structure, wherein a high Young's modulus region having a Young's modulus of a higher value than that of a Young's modulus of a material forming the recording layer is provided close to a side surface of the laminated structure. |
| 申请公布号 |
US2017047508(A1) |
申请公布日期 |
2017.02.16 |
| 申请号 |
US201615338783 |
申请日期 |
2016.10.31 |
| 申请人 |
SONY CORPORATION |
发明人 |
Shoji Mitsuharu |
| 分类号 |
H01L43/02;H01L43/10;H01L27/22;H01L43/08 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile magnetic memory device, comprising:
a magnetoresistance-effect element that includes:
a laminated structure that has a recording layer in which an axis of easy magnetization of the recording layer is oriented in a perpendicular direction with respect to a surface of the recording layer;a first wiring line electrically connected to a lower part of the laminated structure; and a second wiring line electrically connected to an upper part of the laminated structure, wherein a first region that has a Young's modulus value lower than that of a material of the recording layer is provided above the laminated structure, below the laminated structure, or in regions above and below the laminated structure. |
| 地址 |
Tokyo JP |
