| 发明名称 |
GROWING GROUPS III-V LATERAL NANOWIRE CHANNELS |
| 摘要 |
In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the <111> direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon. |
| 申请公布号 |
US2017047399(A1) |
申请公布日期 |
2017.02.16 |
| 申请号 |
US201514824461 |
申请日期 |
2015.08.12 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Lee Sanghoon;Leobandung Effendi;Mo Renee;Wacaser Brent A. |
| 分类号 |
H01L29/06;H01L29/66;H01L29/04;H01L29/20;H01L21/762;H01L21/306;H01L21/308;H01L29/786;H01L29/423 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
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| 主权项 |
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| 地址 |
Armonk NY US |
