| 摘要 |
A method for manufacturing a silicon carbide semiconductor device includes, in the following order: a grinding step, in which a silicon carbide semiconductor substrate 110 is ground, from the side of a second main surface 114, in order to form a relief on the second main surface; a metal thin film formation step, in which a metal thin film 118 comprising a metal capable of forming a metal carbide is formed on the second main surface of the silicon carbide semiconductor substrate; a laser beam radiation step, in which a laser beam in the visible spectrum or the infrared spectrum is radiated onto the metal thin film to heat the same, thereby forming a metal carbide 120 at the interface between the silicon carbide semiconductor substrate and the metal thin film; an etching step, in which a metal-containing by-product layer 122 which may have formed on the surface side of the metal carbide is removed by etching with a non-oxidizing liquid chemical, thereby exposing the metal carbide on the surface; and an electrode layer formation step, in which a cathode electrode 126 is formed on the metal carbide. This method for manufacturing a silicon carbide semiconductor device allows the manufacture, at low cost, of an ohmic electrode that has superior characteristics of resistance and adhesion and does not experience problems with carbon precipitation. |
