SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device and a method of fabricating the same, the semiconductor device includes a silicon substrate, a fin shaped structure and a shallow trench isolation. The fin shaped structure is disposed on the silicon substrate and includes a silicon germanium (SiGe) layer extending downwardly from a top end and at least occupying 80% to 90% of the fin shaped structure. The shallow trench isolation covers a bottom portion of the fin shaped structure.

主权项

1. A semiconductor device, comprising:
a silicon substrate; a fin shaped structure disposed on the silicon substrate and comprising a silicon germanium layer at least extending within the fin shaped structure and occupying at least 80% to 90% of the height of the fin shaped structure from top to bottom, wherein the fin shaped structure is a semiconductor fin shaped structure, and the material of the silicon substrate is different from the material of the silicon germanium layer; a shallow trench isolation covering the fin shaped structure, and a silicon oxide layer disposed on a bottom portion of the fin shaped structure, wherein a bottom surface of the silicon oxide layer is higher than a bottom surface of the silicon germanium layer.