| 发明名称 |
Structures and Methods for Forming Fin Structures |
| 摘要 |
Structures and methods are provided for forming fin structures. A first fin structure is formed on a substrate. A shallow-trench-isolation structure is formed surrounding the first fin structure. At least part of the first fin structure is removed to form a cavity. A first material is formed on one or more side walls of the cavity. A second material is formed to fill the cavity, the second material being different from the first material. At least part of the STI structure is removed to form a second fin structure including the first material and the second material. At least part of the first material that surrounds the second material is removed to fabricate semiconductor devices. |
| 申请公布号 |
US2017047222(A1) |
申请公布日期 |
2017.02.16 |
| 申请号 |
US201615334354 |
申请日期 |
2016.10.26 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
WANG SHENG-CHEN;YEONG SAI-HOOI;WEN TSUNG-YAO;CHEN YEN-MING |
| 分类号 |
H01L21/02;H01L21/283;H01L21/762;H01L29/06;H01L21/3065 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a first fin structure on a substrate; forming a first material surrounding the first fin structure; removing at least part of the first fin structure to form a cavity; forming a second material to fill the cavity, the second material being different from the first material; and removing at least part of the first material that surrounds the second material to fabricate semiconductor devices. |
| 地址 |
Hsinchu TW |
