| 摘要 |
A film comprising carbon-containing silicon oxide is obtained through chemical vapor deposition (CVD), and is used for a sealing film. A film comprising carbon-containing silicon oxide, which is formed by CVD using an organic silicon compound as a starting material, the organic silicon compound having a structure in which alkoxyalkyl is directly bonded to a silicon atom, and including, for example, compounds represented by general formulae (1) to (4), such film being used as a sealing film for a gas barrier member, an FPD device, a semiconductor device and the like. |
