Carbon mixture ohmic contact for carbon nanotube transistor devices

摘要

A cobalt-carbon (Co—C) eutectic metal alloy ohmic contact for a radio-frequency (RF) carbon nanotube (CNT) field effect transistor (FET) device and a method of manufacturing same are disclosed. Embodiments of a method include providing a graphite crucible, placing Co and a C source within the graphite crucible, heating the graphite crucible containing the Co and C source such that the Co and C source combine with graphite from the graphite crucible to thereby form a Co—C eutectic metal alloy, and creating an ohmic contact by depositing the Co—C eutectic metal alloy directly on top surfaces of CNTs of a RF CNT FET device such that the Co—C eutectic metal alloy is in direct contact with the CNTs. The Co—C eutectic metal alloy ohmic contact formed in this manner is consistently stabile and uniform and functions as a high work function layer that also serves as an adhesion layer to the CNTs.

主权项

1. A carbon nanotube (CNT) transistor device comprising:
a plurality of CNTs of a transistor device, wherein the CNTs have top surfaces; and an ohmic contact deposited directly on the top surfaces of the CNTs such that the ohmic contact is in direct contact with the CNTs, wherein the ohmic contact has a top surface; and a resistivity layer deposited on the top surface of the ohmic contact, wherein the ohmic contact comprises a cobalt-carbon mixture that serves as an adhesion layer.