Method and apparatus for depositing atomic layers on a substrate

摘要

Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory.

主权项

1. Apparatus for depositing a plurality of atomic layers on a substrate, the apparatus comprising
a deposition head configured for rotating through a rotation trajectory, the deposition head having an output face configured to at least partly face the substrate and supply a precursor gas to the substrate via a precursor gas supply, wherein the output face has a substantially rounded shape defining a movement path of the substrate, the apparatus configured to deposit the plurality of atomic layers during movement of the substrate through the apparatus, the apparatus further comprising a transporter configured to transport the substrate towards and away from the deposition head, wherein the transporter is configured for moving the substrate towards the deposition head at a first position, and wherein the transporter is configured for moving the substrate away from the deposition head at a second position, to thereby define a first part of the rotation trajectory where the precursor gas supply faces the substrate and a second part of the rotation trajectory where the precursor gas supply does not face the substrate; a gas switching structure configured for switching between
supplying the precursor gas through the precursor gas supply to the substrate in those parts of the output face that, during said rotating, are located in the first part of the rotation trajectory, andinterrupting supply of the precursor gas through the precursor gas supply in those parts of the output face that, during said rotating, are located in the second part of the rotation trajectory.