| 发明名称 | Preparation of low defect density of III-V on Si for device fabrication | ||
| 摘要 | A method of forming a semiconducting material includes depositing a graded buffer on a substrate to form a graded layer of an indium (In) containing III-V material, the In containing III-V material being indium-gallium-arsenic (InGaAs) or indium-aluminum-arsenic (InAlAs) and comprising In in an increasing atomic gradient up to 35 atomic % (at. %) based on total atomic weight of InGa or InAl; and forming a layer of InGaAs on the graded layer, the layer of InGaAs comprising about 25 to about 100 at. % In based on total atomic weight of InGa. | ||
| 申请公布号 | US9570296(B2) | 申请公布日期 | 2017.02.14 |
| 申请号 | US201514744145 | 申请日期 | 2015.06.19 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Cheng Cheng-Wei;Sadana Devendra K.;Shiu Kuen-Ting;Sun Yanning |
| 分类号 | H01L29/20;H01L21/02 | 主分类号 | H01L29/20 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP |
| 主权项 | 1. A method of forming a semiconducting material, the method comprising: depositing a high aluminum content III-V material layer on a substrate, the high aluminum content III-V material layer comprising at least one III element and a V element, the at least one III element comprising Al and being present in an amount of least 50 atomic % (at. %) based on total atomic weight of the at least one III element, and the high aluminum content III-V material layer being partially oxidized to include AlO; depositing a graded buffer on the high aluminum content III-V material layer to form a graded layer of an indium (In) containing III-V material, the In containing III-V material being indium-gallium-arsenic (InGaAs) or indium-aluminum-arsenic (InAlAs) and comprising In in an increasing atomic gradient up to 35 atomic % (at.%) based on total atomic weight of InGa or InAl; and forming a layer of InGaAs on the graded layer, the layer of InGaAs comprising about 25 to about 100 at. % In based on total atomic weight of InGa. | ||
| 地址 | Armonk NY US | ||