Plasma processing apparatus and plasma processing method

摘要

A plasma processing apparatus includes: a reaction chamber; a stage which is disposed inside the reaction chamber and on which a conveyance carrier is mountable; an electrostatic chuck mechanism including an electrode portion that is disposed inside the stage; a support portion which supports the conveyance carrier between a stage-mounted position on the stage and a transfer position that is distant from the stage upward; and an elevation mechanism which elevates and lowers the support portion relative to the stage. In a case in which the conveyance carrier is mounted on the stage by lowering the support portion, the electrostatic chuck mechanism starts applying a voltage to the electrode portion before contact of an outer circumferential portion of a holding sheet which holds the conveyance carrier to the stage.

主权项

1. A plasma processing method for performing plasma processing on a substrate that is held by a conveyance carrier that is mounted on a stage of the plasma processing apparatus, the conveyance carrier comprising a holding sheet that holds the substrate and a frame that is attached to an outer circumferential portion of the holding sheet, said plasma processing method comprising:
causing a support portion, which is capable of being elevated and lowered relative to the stage, to support the conveyance carrier at a transfer position that is distant from the stage upward; mounting the conveyance carrier to a stage-mounted position on the stage by lowering the support portion; and applying a voltage to an electrode portion, disposed inside the stage, of an electrostatic chuck mechanism before contact of the outer circumferential portion of the holding sheet to the stage.