发明名称 SEMICONDUCTOR PACKAGE HAVING A SUBSTRATE STRUCTURE WITH SELECTIVE SURFACE FINISHES
摘要 The present disclosure relates to a semiconductor package having a substrate structure with selective surface finishes, and a process for making the same. The disclosed semiconductor package includes a substrate body, a first metal structure having a first finish area and a second finish area, a second metal structure having a third finish area, a surface finish, and a tuning wire. The first metal structure and the second metal structure are formed over the substrate body. The surface finish is provided over the first finish area of the first metal structure and at least a portion of the third finish area of the second metal structure. The surface finish is not provided over the second finish area of the first metal structure. The tuning wire is coupled between the first finish area and at least one portion of the third finish area.
申请公布号 US2017040273(A1) 申请公布日期 2017.02.09
申请号 US201615224977 申请日期 2016.08.01
申请人 Qorvo US, Inc. 发明人 Morris Thomas Scott;Hartmann Robert
分类号 H01L23/00;H01L23/31;H01L23/498 主分类号 H01L23/00
代理机构 代理人
主权项 1. An apparatus comprising: a substrate body having a top surface; a first finished metal structure comprising a first metal structure that is formed over the top surface of the substrate body and has a first finish area and a second finish area, wherein the first finish area is finished with a first surface finish and the second finish area is not finished with the first surface finish; a second finished metal structure comprising a second metal structure that is formed over the top surface of the substrate body and has a third finish area, wherein at least one portion of the third finish area is finished with the first surface finish; and a tuning wire coupled between the first finish area and the at least one portion of the third finish area.
地址 Greensboro NC US