| 发明名称 |
Integrated Circuit Devices Having Through-Silicon Via Structures |
| 摘要 |
An integrated circuit (IC) device includes a first substrate and a first structure on a front surface of the first substrate. The first structure includes a first interlayer insulating layer structure including a plurality of first conductive pad layers spaced apart from one another at different levels of the first interlayer insulating layer structure. The IC device includes a second substrate on the first substrate and a second structure on a front surface of the second substrate, which faces the front surface of the first substrate. The second structure includes a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure. A through-silicon via (TSV) structure penetrates the second substrate and the second interlayer insulating layer structure. The TSV structure is in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels. |
| 申请公布号 |
US2017040373(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201615227509 |
申请日期 |
2016.08.03 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Sun-hyun;Jung Sang-il;Park Byung-jun |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit (IC) device comprising:
a first substrate; a first structure on a front surface of the first substrate, the first structure comprising a first interlayer insulating layer structure comprising a plurality of first conductive pad layers spaced apart from one another and located at different levels of the first interlayer insulating layer structure; a second substrate on the first substrate; a second structure on a front surface of the second substrate, which faces the front surface of the first substrate, the second structure comprising a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure; and a through-silicon via (TSV) structure configured to penetrate the second substrate and the second interlayer insulating layer structure, the TSV structure being in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels of the first interlayer insulating layer structure. |
| 地址 |
Suwon-si KR |
