| 发明名称 |
Substrate Processing Apparatus |
| 摘要 |
Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit. |
| 申请公布号 |
US2017037512(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201615227602 |
申请日期 |
2016.08.03 |
| 申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
SAIDO Shuhei;YOSHIDA Hidenari;YAMAGUCHI Takatomo;NAKADA Takayuki;TANIYAMA Tomoshi |
| 分类号 |
C23C16/455;H01L21/67;C23C16/458;C23C16/46;C23C16/44 |
主分类号 |
C23C16/455 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing apparatus comprising:
a process chamber where a substrate is processed; a substrate retainer configured to support the substrate in the process chamber; a process gas supply unit configured to supply a process gas into the process chamber; a first heater installed outside the process chamber and configured to heat an inside of the process chamber; a thermal insulating unit disposed under the substrate retainer; a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber; and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit. |
| 地址 |
Tokyo JP |
