| 摘要 |
A Single-Pole-Single-Throw (SPST) switch for RF application is disclosed that can include a semiconductor MOSFET transistor T, wherein its drain terminal can be connected to a resistor R3 and capacitor C2. It can have a source terminal connected to a resistor R1 and capacitor C1, a gate terminal connected to resistor R2, a body connected by resistor R4 to GND, and the body can be connected to the anode of a diode DE The Cathode of diode D1 can be connected to a power supply Vdd through a resistor R6. The Cathode of diode D1 can also be connected to the cathode of another diode D2. The anode of D2 can be connected to GND through resistor R5. Capacitor C1 can be connected to an I/O port P1, and capacitor C2 can be connected to an I/O port P2. Inductor L1 can connect to ports P1 and P2, while inductor L2 can connect the source terminal and drain terminal of MOSPET T. This disclosure also provides a Single-Pole-Double-Throw (SPDT) switch and Single-Pole-Multiple-Throw (SPMT) switch based on the proposed SPST concept. The SPST disclosed can offer higher isolation and higher linearity to the transmit (TX) arm of the Radio-Frequency Front-End-Module (RF FEM), while maintaining relatively good performance in the receive (RX) arm of the RF FEM. |
