Multi-Layer Plate Device

摘要

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a continuous layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the time at temperature, the joining atmosphere, and other factors. The ceramic pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

主权项

1. A multi-layer ceramic plate assembly for use in semiconductor processing, said multi-layer ceramic plate assembly comprising:
an upper plate layer, said upper plate layer comprising ceramic; a lower plate layer, said lower plate layer comprising ceramic; said upper plate layer and said lower plate layer joined together to form an interior space between said upper plate layer and said lower plate layer within an annulus of an annular joining layer, and an annular joining layer disposed between said upper plate layer and said lower plate layer, wherein said annular joining layer joins an outer periphery of a bottom surface of said upper plate layer to a top surface of an outer periphery of said lower plate layer, wherein said joining layer comprises metallic aluminum, and wherein said joining layer hermetically seals said interior space between said upper plate layer and said lower plate layer from the exterior of said ceramic plate assemble through said joining layer, wherein said joining layer hermetically seals with a joint with a vacuum leak rate of less than 1×10E−9 sccm He/sec.