| 发明名称 |
Semiconductor Devices, a Semiconductor Diode and a Method for Forming a Semiconductor Device |
| 摘要 |
A semiconductor device includes at least one highly doped region of an electrical device arrangement formed in a semiconductor substrate and a contact structure including an NTC (negative temperature coefficient of resistance) portion arranged adjacent to the at least one highly doped region at a front side surface of the semiconductor substrate. The NTC portion includes a negative temperature coefficient of resistance material. |
| 申请公布号 |
US2017040431(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201615229828 |
申请日期 |
2016.08.05 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Basler Thomas;Mahler Joachim;Schulze Hans-Joachim |
| 分类号 |
H01L29/45;H01L29/08;H01L29/861;H01L29/43 |
主分类号 |
H01L29/45 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
at least one highly doped region of an electrical device arrangement formed in a semiconductor substrate; and a contact structure comprising an NTC (negative temperature coefficient of resistance) portion arranged adjacent to the at least one highly doped region at a front side surface of the semiconductor substrate, the NTC portion comprising a negative temperature coefficient of resistance material. |
| 地址 |
Neubiberg DE |
