SELECTIVE DEPOSITION OF ALUMINUM AND NITROGEN CONTAINING MATERIAL

摘要

Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

主权项

1. A process for selectively depositing a material comprising aluminum and nitrogen on a first surface of a substrate relative to a second surface comprising Si—O bonds of the same substrate, the process comprising one or more deposition cycles comprising:
contacting the substrate with a first vapor phase precursor comprising aluminum; contacting the substrate with a second vapor phase precursor comprising nitrogen; and wherein the material comprising aluminum and nitrogen is deposited on the first surface of the substrate relative to the second Si—O surface of the same substrate with a selectivity greater than about 50%.