SAWTOOTH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR POWER SEMICONDUCTOR DEVICES

摘要

This invention discloses a semiconductor power device formed in a semiconductor substrate includes rows of multiple horizontal columns of thin layers of alternate conductivity types in a drift region of the semiconductor substrate where each of the thin layers having a thickness to enable a punch through the thin layers when the semiconductor power device is turned on. In a specific embodiment the thickness of the thin layers satisfying charge balance equation q*ND*WN=q*NA*WP and a punch through condition of WP<2*WD*[ND/(NA+ND)] where ND and WN represent the doping concentration and the thickness of the N type layers 160, while NA and WP represent the doping concentration and thickness of the P type layers; WD represents the depletion width; and q represents an electron charge, which cancel out. This device allows for a near ideal rectangular electric field profile at breakdown voltage with sawtooth like ridges.

主权项

1. A method for manufacturing a semiconductor power device in a semiconductor substrate with a drift region comprising:
implanting and forming multiple rows of horizontal slices of continuous thin layers of alternate P-type and N-type doped layers extending continuously and horizontally in said drift region of the semiconductor substrate by manufacturing each of the continuous thin layers having a doping and thickness to enable charge balance and punch through said alternated doped layers during a conduction mode in conducting a current in a vertical direction perpendicular to and cross over the horizontal slices of the P-doped and N-doped layers