| 摘要 |
PROBLEM TO BE SOLVED: To provide a power module semiconductor device capable of improving a heat resistance of a thin SiC power module.SOLUTION: A power module semiconductor device comprises: a ceramic substrate 10; a first Cu plate layer 10a arranged on a surface of the ceramic substrate 10; a bonding layer 21b arranged on the first Cu plate layer 10a; a metal plate 21 arranged on the first Cu plate layer 10a and connected to the first Cu plate layer 10a via the bonding layer 21b; and first semiconductor device Q arranged on the metal plate 21. A thickness of the metal plate 21 is set to lower a heat resistance Ras compared with a case where there is no metal plate 21. |
