| 摘要 |
This LaNiO 3 thin film-forming composition includes: LaNiO 3 precursors; and acetic acid, wherein a ratio of an amount of the LaNiO 3 precursors to 100 mass% of an amount of the LaNiO 3 thin film-forming composition is in a range of 1 mass% to 20 mass% in terms of oxides, and the composition further includes a stabilizer containing N-methyl formamide in an amount of more than 0 mol to 10 mol or less per 1 mol of the total amount of the LaNiO 3 precursors in the composition. |
